IEEE - Institute of Electrical and Electronics Engineers, Inc. - Polycrystalline-silicon channel trap induced transient read instability in a 3D NAND flash cell string

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Wen-Jer Tsai ; W. L. Lin ; C. C. Cheng ; S. H. Ku ; Y. L. Chou ; Lenvis Liu ; S. W. Hwang ; T. C. Lu ; K. C. Chen ; Tahui Wang ; Chih-Yuan Lu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838395
Regular:

Vt instability caused by grain-boundary trap (GBT) in the poly-crystalline silicon (poly-Si) channel of a 3D NAND string are comprehensively studied. Experimental results reveal that... View More

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