IEEE - Institute of Electrical and Electronics Engineers, Inc. - CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): T. Ando ; E. Cartier ; P. Jamison ; A. Pyzyna ; S. Kim ; J. Bruley ; K. Chung ; H. Shobha ; I. Estrada-Raygoza ; H. Tang ; S. Kanakasabapathy ; T. Spooner ; L. Clevenger ; G. Bonilla ; H. Jagannathan ; V. Narayanan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838382
Regular:

We demonstrate a record-low EOT (equivalent oxide thickness) of 0.8 nm for a metal-insulator-metal (MIM) decoupling capacitor, which is compatible with back-end-of-line (BEOL) processing.... View More

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