IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-yield large area MoS 2 technology: Material, device and circuits co-optimization

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): L. Yu ; D. El-Damak ; U. Radhakrishna ; A. Zubair ; D. Piedra ; X. Ling ; Y. Lin ; Y. Zhang ; Y.-H Lee ; D. Antoniadis ; J. Kong ; A. Chandrakasan ; T. Palacios
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838356
Regular:

Two-dimensional electronics based on single-layer (SL) MoS2 offers significant advantages for realizing large-scale flexible systems owing to the ultrathin nature, good transport... View More

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