IEEE - Institute of Electrical and Electronics Engineers, Inc. - Statistical investigation of the impact of program history and oxide-metal interface on OxRRAM retention

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): C. Y. Chen ; A. Fantini ; R. Degraeve ; A. Redolfi ; G. Groeseneken ; L. Goux ; G. S. Kar
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838347
Regular:

We statistically investigate for the first time the impact of programming history on the data-retention properties of tail bits in scaled OxRRAM devices. By using an innovative test method we... View More

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