IEEE - Institute of Electrical and Electronics Engineers, Inc. - Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): C. Nail ; G. Molas ; P. Blaise ; G. Piccolboni ; B. Sklenard ; C. Cagli ; M. Bernard ; A. Roule ; M. Azzaz ; E. Vianello ; C. Carabasse ; R. Berthier ; D. Cooper ; C. Pelissier ; T. Magis ; G. Ghibaudo ; C. Vallee ; D. Bedeau ; O. Mosendz ; B. De Salvo ; L. Perniola
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838346
Regular:

In this paper we clarify for the first time the correlation between endurance, window margin and retention of Resistive RAM. To this aim, various classes of RRAM (OXRAM and CBRAM) are... View More

Advertisement