IEEE - Institute of Electrical and Electronics Engineers, Inc. - Forming-free metal-oxide ReRAM by oxygen ion implantation process

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Wonjoo Kim ; Alexander Hardtdegen ; Christian Rodenbucher ; Stephan Menzel ; Dirk J. Wouters ; Susanne Hoffmann-Eifert ; Dan Buca ; Rainer Waser ; Vikas Rana
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838345
Regular:

We propose a new method for obtaining forming-free ReRAM devices by oxygen ion implantation (O2 IIP) in the metal oxide film during the device fabrication process. By tuning the... View More

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