IEEE - Institute of Electrical and Electronics Engineers, Inc. - ALD-based confined PCM with a metallic liner toward unlimited endurance

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): W. Kim ; M. BrightSky ; T. Masuda ; N. Sosa ; S. Kim ; R. Bruce ; F. Carta ; G. Fraczak ; H. Y. Cheng ; A. Ray ; Y. Zhu ; H. L. Lung ; K. Suu ; C. Lam
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838343
Regular:

We present for the first time in-depth analysis of the outstanding endurance characteristics of an ALD-based confined phase change memory (PCM) [1] with a thin metallic liner. Experimental results... View More

Advertisement