IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Ujwal Radhakrishna ; Pilsoon Choi ; Jesus Grajal ; Li-Shiuan Peh ; Tomas Palacios ; Dimitri Antoniadis
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838341
Regular:

This study is a first demonstration of the use of a physical compact model as a tool to identify technology bottlenecks to the linearity performance of emerging devices such as GaN HEMTs and to... View More

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