IEEE - Institute of Electrical and Electronics Engineers, Inc. - Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications

2016 3rd International Conference on Electronic Design (ICED)

Author(s): A. Y. En ; N. Ahmad ; M. Mohamad Isa ; Siti S. Mat Isa ; Muhammad M. Ramli ; N. Khalid ; N. I. M. Nor ; S. R. Kasjoo ; M. Missous
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2016
Conference Location: Phuket, Thailand
Conference Date: 11 August 2016
Page(s): 18 - 22
ISBN (Electronic): 978-1-5090-2160-4
ISBN (USB): 978-1-5090-2159-8
DOI: 10.1109/ICED.2016.7804598
Regular:

Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications is substantial to the future transistors that will operate in high speed and low noise conditions. The novel pHEMT is... View More

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