IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of current and frequency on write, read, and erase widths for thin-film inductive and magnetoresistive heads

Author(s): T. Lin ; J.A. Christner ; T.B. Mitchell ; J.-S. Gau ; P.K. George
Sponsor(s): IEEE Magnetics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1989
Volume: 25
Page Count: 6
Page(s): 710 - 715
ISSN (Paper): 0018-9464
ISSN (Online): 1941-0069
DOI: 10.1109/20.22627
Regular:

The dependence of write, read, and erase widths on current and frequency for thin-film inductive (TFI) and inductive-write/magnetoresistive-read (MR) heads was studied. Currents of up to... View More

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