IEEE - Institute of Electrical and Electronics Engineers, Inc. - An atomistic study of copper extrusion in through-silicon-via using phase field crystal models

2016 6th Electronic System-Integration Technology Conference (ESTC)

Author(s): Zhiheng Huang ; Jinxin Liu ; Paul P. Conway ; Zhuojun Hu ; Yang Liu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2016
Conference Location: Grenoble, France
Conference Date: 13 September 2016
Page(s): 1 - 8
ISBN (Electronic): 978-1-5090-1402-6
DOI: 10.1109/ESTC.2016.7764700
Regular:

Three-dimensional system integration using Cu through-silicon-via (TSV) technology enables vertical interconnection of stacked dies. However, the large statistical distribution of plastic Cu... View More

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