IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of energy band distortions on D/ mu in heavily doped n-type silicon

Author(s): S.K. Sharma
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1989
Volume: 36
Page Count: 3
Page(s): 768 - 770
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.22485
Regular:

Calculations have shown that energy band distortions increase the magnitude of D/ mu (diffusion/mobility ratio). In particular, taking band tails into account in a heavily doped material... View More

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