IEEE - Institute of Electrical and Electronics Engineers, Inc. - Intrinsic transconductance extraction for deep-submicrometer MOSFETs

Author(s): J. Chung ; M.-C. Jeng ; G. May ; P.K. Ko ; C. Hu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1989
Volume: 36
Page Count: 3
Page(s): 140 - 142
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.21194
Regular:

Significant error in the extracted intrinsic transconductance g/sub mi/ can arise from source-drain resistance asymmetry. A simple procedure to either correct for or avoid this source of error is... View More

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