IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thermal design studies of high-power heterojunction bipolar transistors

Author(s): Guang-Bo Gao ; Ming-Zhu Wang ; Xiang Gui ; H. Morkoc
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1989
Volume: 36
Page Count: 10
Page(s): 854 - 863
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.299666
Regular:

A theoretical thermoelectro-feedback model has been developed for the thermal design of high-power GaAlAs/GaAs heterojunction bipolar transistors (HBTs). The power-handling capability,... View More

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