IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electron transport in AlSb/InAs/GaSb tunneling hot-electron transistor

Author(s): T.H. Chiu ; A.F.J. Levi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1989
Volume: 36
Page Count: 2
Page(s): 2,619 - 2,620
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.43739
Regular:

Summary form only given. The authors recently (1987) demonstrated room-temperature operation of a unipolar AlSbAs/InAs/GaSb double-heterojunction HET (hot-electron transistor) with a... View More

Advertisement