IEEE - Institute of Electrical and Electronics Engineers, Inc. - Performance of a high-resolution contact-type linear image sensor with a-Si:H/a-SiC:H heterojunction photodiodes

Author(s): M. Kunii ; K. Hasegawa ; H. Oka ; Y. Nakazawa ; T. Takeshita ; H. Kurihara
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1989
Volume: 36
Page Count: 6
Page(s): 2,877 - 2,882
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.40949
Regular:

A 400 DPI (dots-per-inch) contact-type linear image sensor with a scanning speed of 2 ms/line using amorphous silicon photodiodes and poly-Si thin-film transistor drivers has been developed. The... View More

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