IEEE - Institute of Electrical and Electronics Engineers, Inc. - Small angle X-ray scattering from microvoids in the a-SiC:H alloy

Author(s): A.H. Mahan ; B.P. Nelson ; R.S. Crandall ; D.L. Williamson
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1989
Volume: 36
Page Count: 4
Page(s): 2,859 - 2,862
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.40947
Regular:

Small-angle X-ray scattering (SAXS) measurements on a series of a-SiC:H alloy films deposited in a glow discharge reactor using SiH/sub 4//CH/sub 4/ gas mixtures are discussed. It was found that... View More

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