IEEE - Institute of Electrical and Electronics Engineers, Inc. - Photoemission spectroscopy of heterojunctions of amorphous hydrogenated silicon with silicon oxide and nitride

Author(s): L. Yang ; B. Abeles ; W. Eberhardt ; D. Sondericker
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1989
Volume: 36
Page Count: 5
Page(s): 2,798 - 2,802
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.40940
Regular:

A study of the growth and electronic structure of a-Si:H/a-SiN/sub x/:H and a-Si:H/a-SiO/sub x/:H heterojunctions by photoemission spectroscopy is discussed. The interfaces in a-Si:H/a-SiO/sub x/... View More

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