IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ohmic contacts formed by ion mixing in the Si-diamond system

Author(s): F. Fang ; C.A. Hewett ; M.G. Fernandes ; S.S. Lau
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1989
Volume: 36
Page Count: 4
Page(s): 1,783 - 1,786
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.34243
Regular:

Graded-bandgap contacts to natural type-IIb diamond formed by ion-beam mixing of Si (500 AA/diamond samples) are discussed. Ion mixing was carried out using 240-keV Kr/sup +/ ionsat a dose of... View More

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