IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistance

Author(s): H.G. Henry
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 1989
Volume: 36
Page Count: 4
Page(s): 1,390 - 1,393
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.30948
Regular:

The results of systematic measurements of transfer length L/sub T/ and sheet resistance under the contact R/sub sk/ for alloyed AuGe/Ni/Au ohmic contacts to GaAs active layers prepared both by VPE... View More

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