IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET

2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)

Author(s): Fernando F. Teixeira ; Paula G. D. Agopian ; Joao A. Martino
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2016
Conference Location: Belo Horizonte, Brazil
Conference Date: 29 August 2016
Page(s): 1 - 4
ISBN (Electronic): 978-1-5090-2788-0
DOI: 10.1109/SBMicro.2016.7731330
Regular:

In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and... View More

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