IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication and characterization of few-layer Tungsten Disulfide (WS 2 ) field effect transistors

2016 IEEE International Nanoelectronics Conference (INEC)

Author(s): Xi Liu ; Heshen Huang ; Maosen Huang ; Zhaojun Liu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Chengdu, China
Conference Date: 9 May 2016
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-8969-3
ISSN (Electronic): 2159-3531
DOI: 10.1109/INEC.2016.7589423
Regular:

Owing to the direct bandgap and high mobility, two-dimensional semiconductor materials have stimulated a lot interest. However, the contact between the TDMs and metal remains far from optimized... View More

Advertisement