IEEE - Institute of Electrical and Electronics Engineers, Inc. - Spin-transfer versus spin-orbit torque MRAM

2016 IEEE International Nanoelectronics Conference (INEC)

Author(s): Kulothungasagaran Narayanapillai ; Xuepeng Qiu ; Yi Wang ; Jaehyun Kwon ; Jiawei Yu ; Li Ming Loong ; William Legrand ; Jungbum Yoon ; Karan Banerjee ; Hyunsoo Yang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Chengdu, China
Conference Date: 9 May 2016
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-8969-3
ISSN (Electronic): 2159-3531
DOI: 10.1109/INEC.2016.7589383
Regular:

Spin transfer torque-MRAM is a viable non-volatile memory solution for replacing conventional memories and can cover a broad range of embedded memory applications. Recently discovered spin orbit... View More

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