IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultra-narrow Si Fins with low LER/LWR for 16/14nm node fabricated by 1D hard mask wet trimming

2016 IEEE International Nanoelectronics Conference (INEC)

Author(s): Yuancheng Yang ; Ming Li ; Jiewen Fan ; Gong Chen ; Hao Zhang ; Ru Huang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Chengdu, China
Conference Date: 9 May 2016
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-8969-3
ISSN (Electronic): 2159-3531
DOI: 10.1109/INEC.2016.7589331
Regular:

In this paper, the impact of structure and material of hard mask wet trimming (HMWT) process on the formation of Si Fins and their LER/LWR is investigated experimentally. Combining a capping layer... View More

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