IEEE - Institute of Electrical and Electronics Engineers, Inc. - Performance evaluation and optimization of single layer MoS 2 double gate transistors with metallic contacts

2016 IEEE International Nanoelectronics Conference (INEC)

Author(s): Lang Zeng ; Fanghui Gong ; Jiang Nan ; Yangqi Huang ; He Zhang ; Xiaoyan Liu ; Youguang Zhang ; Weisheng Zhao
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Chengdu, China
Conference Date: 9 May 2016
Page(s): 1 - 2
ISBN (Electronic): 978-1-4673-8969-3
ISSN (Electronic): 2159-3531
DOI: 10.1109/INEC.2016.7589295
Regular:

In this work, the performance of single layer MoS2 double gate transistors with metallic contacts is evaluated with quantum ballistic calculation. The image force which is crucial for accurate... View More

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