IEEE - Institute of Electrical and Electronics Engineers, Inc. - In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As double-heterojunction p-n-p bipolar transistors grown by molecular beam epitaxy

Author(s): T. Won ; C.K. Peng ; J. Chyi ; H. Morkoc
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 1988
Volume: 9
Page Count: 3
Page(s): 334 - 336
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.735
Regular:

P-n-p In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As double-heterojunction bipolar transistors with a p/sup +/-InAs emitter cap layer grown by molecular-beam epitaxy have been... View More

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