IEEE - Institute of Electrical and Electronics Engineers, Inc. - The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects

Author(s): T. Skotnicki ; G. Merckel ; T. Pedron
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1988
Volume: 9
Page Count: 4
Page(s): 109 - 112
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.2058
Regular:

It is shown that the influence of the drain-source field on the potential barrier height is physically equivalent to and can be replaced by a reduction in channel doping concentration according to... View More

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