IEEE - Institute of Electrical and Electronics Engineers, Inc. - Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory

2016 IEEE International Reliability Physics Symposium (IRPS)

Author(s): A. Subirats ; E. Capogreco ; R. Degraeve ; A. Arreghini ; G. Van den bosch ; D. Linten ; Jan Van Houdt ; A. Furnemont
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2016
Conference Location: Pasadena, CA, USA
Conference Date: 17 April 2016
ISBN (Electronic): 978-1-4673-9137-5
ISSN (Electronic): 1938-1891
DOI: 10.1109/IRPS.2016.7574570
Regular:

In this paper, we present a first characterization of the charge trapping in vertical 3D SONOS with InxGa1-xAs channel using IV hysteresis and RTN measurements. We show that... View More

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