IEEE - Institute of Electrical and Electronics Engineers, Inc. - Methodology for submicron device model development

Author(s): V. Marash ; R.W. Dutton
Sponsor(s): IEEE Council on Electronic Design Automation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1988
Volume: 7
Page Count: 8
Page(s): 299 - 306
ISSN (Paper): 0278-0070
ISSN (Online): 1937-4151
DOI: 10.1109/43.3161
Regular:

Two-dimensional (2-D) device analysis is coupled into a new model development environment. An improved set of 2-D analytical boundary conditions for submicron MOS technology is developed through... View More

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