IEEE - Institute of Electrical and Electronics Engineers, Inc. - Minimizing cell-to-cell interference by exploiting differential bit impact characteristics of scaled MLC NAND flash memories

2016 5th Non-Volatile Memory Systems and Applications Symposium (NVMSA)

Author(s): Yejia Di ; Liang Shi ; Congming Gao ; Kaijie Wu ; Chun Jason Xue ; Edwin H. M. Sha
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2016
Conference Location: Daegu, South Korea
Conference Date: 17 August 2016
Page(s): 1 - 6
ISBN (Electronic): 978-1-5090-4136-7
DOI: 10.1109/NVMSA.2016.7547180
Regular:

Appealed by the market, flash memory density is being increasingly improved, and the technology scale is being reduced. Currently, scaled multi-level-cell (MLC) flash memory has been the dominant... View More

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