IEEE - Institute of Electrical and Electronics Engineers, Inc. - Wavelength dependence of characteristics of 1.2-1.55 mu m InGaAsP/InP p-substrate buried crescent laser diodes

Author(s): S. Kakimoto ; A. Takemoto ; Y. Sakakibara ; Y. Nakajima ; M. Fujiwara ; H. Namizaki ; H. Higuchi ; Y. Yamamoto
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1988
Volume: 24
Page Count: 7
Page(s): 29 - 35
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/3.90
Regular:

Laser diodes with the p-substrate buried-crescent structure have been fabricated for the 1.2-1.55- mu m wavelength region. The dependence of laser characteristics on wavelength has been measured.... View More

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