IEEE - Institute of Electrical and Electronics Engineers, Inc. - Post-irradiation effects in CMOS integrated circuits (SRAMs)

Author(s): T.C. Zietlow ; C.E. Barnes ; T.C. Morse ; J.S. Grusynski ; K. Nakamura ; A. Amram ; K.T. Wilson
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1988
Volume: 35
Page Count: 5
Page(s): 1,662 - 1,666
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/23.25517
Regular:

The postirradiation response of CMOS integrated circuits from three vendors was measured as a function of temperature and irradiation bias. It was found that a worst-case anneal temperature for... View More

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