IEEE - Institute of Electrical and Electronics Engineers, Inc. - Lateral charge transport from heavy-ion tracks in integrated circuit chips

Author(s): J.A. Zoutendyk ; H.R. Schwartz ; L.R. Nevill
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1988
Volume: 35
Page Count: 4
Page(s): 1,644 - 1,647
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/23.25513
Regular:

A 256 K DRAM has been used to study the lateral transport of charge (electron-hole pairs) induced by direct ionization from heavy-ion tracks in an IC. The qualitative charge transport has been... View More

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