IEEE - Institute of Electrical and Electronics Engineers, Inc. - L- and S-band low-noise cryogenic GaAs FET amplifiers

Author(s): S. De Panfilis ; J. Rogers
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1988
Volume: 36
Page Count: 4
Page(s): 607 - 610
ISSN (Paper): 0018-9480
ISSN (Online): 1557-9670
DOI: 10.1109/22.3557
Regular:

The authors present the results of the construction and testing of three cryogenic low-noise GaAs FET amplifiers, based on a National Radio Astronomy Observatory design, to be used in a detector... View More

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