IEEE - Institute of Electrical and Electronics Engineers, Inc. - A DC analytical AlGaN/GaN HEMT model for transistor characterisation

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

Author(s): Dawid Kuchta ; Wojciech Wojtasiak
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Krakow, Poland, Poland
Conference Date: 9 May 2016
Page(s): 1 - 4
ISBN (Electronic): 978-1-5090-2214-4
DOI: 10.1109/MIKON.2016.7492083
Regular:

In this paper an analytical model is developed to characterize the performance of GaN-based microwave HEMTs. To theoretically predict mobility and sheet carrier concentration in 2-dimentional... View More

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