IEEE - Institute of Electrical and Electronics Engineers, Inc. - Generalized equivalent circuit model of HEMT including distributed gate effects

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

Author(s): Marcin Goralczyk
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Krakow, Poland
Conference Date: 9 May 2016
Page(s): 1 - 4
ISBN (Electronic): 978-1-5090-2214-4
DOI: 10.1109/MIKON.2016.7492079
Regular:

A model including effects of distributed gate in High Electron Mobility Transistors (HEMTs) is presented. An expression for equivalent gate impedance is derived for general structure described by... View More

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