IEEE - Institute of Electrical and Electronics Engineers, Inc. - Recent advances in kW-level pulsed GaN transistors with very high efficiency

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

Author(s): James Custer ; Gabriele Formicone ; John L. B. Walker
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Krakow, Poland
Conference Date: 9 May 2016
Page(s): 1 - 4
ISBN (Electronic): 978-1-5090-2214-4
DOI: 10.1109/MIKON.2016.7492071
Regular:

This paper reports on GaN transistors having a power output in excess of 1kW for use at L-band frequencies. A 1200W GaN HEMT will be reported with 85% efficiency, this is believed to be the... View More

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