IEEE - Institute of Electrical and Electronics Engineers, Inc. - Pattern dependent plasma charging effect in high aspect ratio 3D NAND architecture

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

Author(s): Zusing Yang ; Yao-An Chung ; Sheng-Yuan Chang ; Hong-Ji Lee ; Nan-Tzu Lian ; Tahone Yang ; Kuang-Chao Chen ; Chih Yuan Lu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Saratoga Springs, NY, USA
Conference Date: 16 May 2016
Page(s): 358 - 360
ISBN (Electronic): 978-1-5090-0270-2
ISSN (Electronic): 2376-6697
DOI: 10.1109/ASMC.2016.7491166
Regular:

Pattern dependent charging effect is explored in this study. Due to increased film thickness in 3D NAND structure, a derivative problem-the plasma-induced charging damage is enhanced during high... View More

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