IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interface preservation during Ge-rich source/drain contact formation

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

Author(s): C. Niu ; M. Raymond ; V. Kamineni ; J. Fronheiser ; S. Siddiqui ; H. Niimi ; J. M. Dechene ; A. Labonte ; P. Adusumilli ; A. V. Carr ; J. Shearer ; J. Demarest ; L. Jiang ; J. Li ; R. W. Hengstebeck
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Saratoga Springs, NY, USA
Conference Date: 16 May 2016
Page(s): 320 - 323
ISBN (Electronic): 978-1-5090-0270-2
ISSN (Electronic): 2376-6697
DOI: 10.1109/ASMC.2016.7491158
Regular:

Contact engineering of Ge-rich source/drain is of critical importance for the development of advanced nano-scale CMOS technology nodes. Germanosilicide or Germanide contacts with low Schottky... View More

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