IEEE - Institute of Electrical and Electronics Engineers, Inc. - In-line characterization of EDRAM for a FINFET technology using VC inspection

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

Author(s): Oliver D. Patterson ; Richard Hafer ; Surbhi Mittal ; Ankur Arya ; Kenneth Stein ; Herbert Ho ; William Davies ; Xiaohu Tang ; Brian Yueh-Ling Hsieh ; Shuen-Cheng Chris Lei
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Saratoga Springs, NY, USA
Conference Date: 16 May 2016
Page(s): 278 - 284
ISBN (Electronic): 978-1-5090-0270-2
ISSN (Electronic): 2376-6697
DOI: 10.1109/ASMC.2016.7491150
Regular:

An E-beam voltage contrast inspection methodology involving multiple inspection points has been created to support development of the EDRAM module for a recent FINFET technology. This methodology... View More

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