IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reduction of extra pattern defects in immersion layer reworks by cleans recipe optimization: CFM: Contamination free manufacturing

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

Author(s): Dhiman Bhattacharyya ; Wei Hong ; Kay Peng ; Vincent Sih
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2016
Conference Location: Saratoga Springs, NY, USA
Conference Date: 16 May 2016
Page(s): 229 - 232
ISBN (Electronic): 978-1-5090-0270-2
ISSN (Electronic): 2376-6697
DOI: 10.1109/ASMC.2016.7491132
Regular:

In order to remove the photoresist during the rework process, a dry rework is primarily used to ash the photoresist followed by a wet cleans process to remove the remaining organic residues. An... View More

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