IEEE - Institute of Electrical and Electronics Engineers, Inc. - GaAs LEDs with n-i-p-i active layers fabricated by selective contact diffusion

Author(s): D.E. Ackley ; J. Mantz ; H. Lee ; N. Nouri ; C.-L. Shieh
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1988
Volume: 35
Page Count: 1
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.8893
Regular:

Devices were fabricated in MBE (molecular-beam epitaxy)-grown wafers with a ten period doping superlattice consisting of 300-AA layers with n=p=3*10/sup 18/ cm/sup -3/, using sequential patterned... View More

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