IEEE - Institute of Electrical and Electronics Engineers, Inc. - 0.5- mu m gate length self-aligned gate MODFET with reduced short-channel effects

Author(s): C.J. Han ; D. Grider ; K. Newstrom ; P. Joslyn ; A. Fraasch ; D.K. Arch
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1988
Volume: 35
Page Count: 2
Page(s): 2,448 - 2,449
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.8878
Regular:

Reduced short-channel effects were obtained by using a buried AlGaAs layer beneath the channel. A 0.5*10- mu m/sup 2/ MODFET was fabricated that had a peak transconductance of 264 mS/mm with a... View More

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