IEEE - Institute of Electrical and Electronics Engineers, Inc. - A pulsed interface-probing technique for MOS interface characterization at mid-gap levels

Author(s): U. Cilingiroglu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1988
Volume: 35
Page Count: 6
Page(s): 2,391 - 2,396
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.8820
Regular:

A pulsed interface-probing (PIP) technique for extracting interface trap density and capture cross section parameters on gate-controlled diodes or on MOS transistors is described. The technique is... View More

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