IEEE - Institute of Electrical and Electronics Engineers, Inc. - Inversion/accumulation-mode polysilicon thin-film transistors: characterization and unified modeling

Author(s): F. Qian ; D.M. Kim ; G.H. Kawamoto
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1988
Volume: 35
Page Count: 9
Page(s): 1,501 - 1,509
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.2583
Regular:

n- and p-channel enhancement-mode polysilicon thin-film transistors are characterized. The device performance is modeled with the use of an effective doping model. This enables a unified... View More

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