IEEE - Institute of Electrical and Electronics Engineers, Inc. - Simulation of submicrometer GaAs MESFET's using a full dynamic transport model

Author(s): Y.-K. Feng ; A. Hintz
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1988
Volume: 35
Page Count: 13
Page(s): 1,419 - 1,431
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.2574
Regular:

Nonstationary transport effects in III-V compound semiconductors are taken into account by the well-known full dynamic transport model. A solution method for its equations is proposed and applied... View More

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