IEEE - Institute of Electrical and Electronics Engineers, Inc. - 10 Watts UHF broadband GaN based power amplifier for multi-band applications

2016 13th International Bhurban Conference on Applied Sciences and Technology (IBCAST)

Author(s): N. Cheema ; A. Kashif ; M. Imran ; F. A. Mughal ; S. Azam
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2016
Conference Location: Islamabad, Pakistan
Conference Date: 12 January 2016
Page(s): 617 - 619
ISBN (CD): 978-1-4673-9125-2
ISBN (Electronic): 978-1-4673-9127-6
ISBN (Paper): 978-1-4673-9126-9
ISSN (Electronic): 2151-1411
DOI: 10.1109/IBCAST.2016.7429942
Regular:

The demand of broadband amplifier has been boosted to meet the requirements of multi-mode and multi-band wireless applications. GaN HEMT is the next generation of RF power transistor technology.... View More

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