IEEE - Institute of Electrical and Electronics Engineers, Inc. - Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator

2016 IEEE 29th International Conference on Micro-Electro-Mechanical Systems (MEMS)

Author(s): Y. Q. Fu ; J. K. Luo ; S. Milne ; A. J. Flewitt ; W. I. Milne
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2016
Conference Location: Shanghai, China
Conference Date: 24 January 2016
Page(s): 1,046 - 1,049
ISBN (Electronic): 978-1-5090-1973-1
ISBN (USB): 978-1-5090-1972-4
DOI: 10.1109/MEMSYS.2016.7421813
Regular:

A digital variable capacitor has been designed and fabricated based on multi-cantilevers of doped nanocrystalline silicon with variable lengths, suspended over a bottom electrode on top of a... View More

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