IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-temperature aluminum thermo-compression wafer bonding with tin antioxidation layer for hermetic sealing of MEMS

2016 IEEE 29th International Conference on Micro-Electro-Mechanical Systems (MEMS)

Author(s): Shiro Satoh ; Hideyuki Fukushi ; Masayoshi Esashi ; Shuji Tanaka
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2016
Conference Location: Shanghai, China
Conference Date: 24 January 2016
Page(s): 581 - 584
ISBN (Electronic): 978-1-5090-1973-1
ISBN (USB): 978-1-5090-1972-4
DOI: 10.1109/MEMSYS.2016.7421692
Regular:

Hermetic Al-Al thermo-compression bonding was demonstrated at the lowest temperature ever reported, 370-390°C, using a thin antioxidation capping layer of Sn. A key factor of hermetic sealing is... View More

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