IEEE - Institute of Electrical and Electronics Engineers, Inc. - 17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization

2016 IEEE International Solid-State Circuits Conference (ISSCC)

Author(s): Taejoong Song ; Woojin Rim ; Sunghyun Park ; Yongho Kim ; Jonghoon Jung ; Giyong Yang ; Sanghoon Baek ; Jaeseung Choi ; Bongjae Kwon ; Yunwoo Lee ; Sungbong Kim ; Gyuhong Kim ; Hyo-Sig Won ; Ja-Hum Ku ; Sunhom Steve Paak ; Es Jung ; Steve Sungho Park ; Kinam Kim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2016
Conference Location: San Francisco, CA, USA
Conference Date: 31 January 2016
Page(s): 306 - 307
ISBN (Electronic): 978-1-4673-9467-3
ISBN (Paper): 978-1-4673-9466-6
ISSN (Electronic): 2376-8606
DOI: 10.1109/ISSCC.2016.7418029
Regular:

The power consumption of a mobile application processor (AP) is strongly limited by the SRAM minimum operating voltage, VMIN [1], since the 6T bit cell must balance between write-ability and bit... View More

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